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where xj is the junction depth, tdiel is the interpoly dielectric thickness, and Vpp, VpD, and VDR are the voltage on the control gate and drain during programming and on the drain during read, respectively. The threshold shift resulting from programing scales with the programming gate voltage. This results in a lower programmed threshold in the read condition and will require a lower control-gate voltage in the read mode. The erased threshold of the memory transistor cannot be arbitrarily reduced because of the punchthrough voltage requirements. Thus, there is a tradeoff between the threshold difference of the erase and program states and the programming time. Since it is desirable to decrease the programming time of a memory element so that the time to program an array not grow linearly with the number of words, the natural consequence is a reduced read margin. Fortunately, the floating-gate cell is inherently a gain cell so that clever circuit design can overcome the decreased read margin. The voltage that must be applied across an oxide to induce a given FN tunneling current is essentially proportional to the oxide thickness for the common case of planar electrodes. The major limitation to the reduction of the tunnel oxide thickness is imposed by the requirement that the leakage of stored charge be low enough that the data represented by the charge can be read out after some long period of time, such as 10 years. Simple calculations of the quantum-mechanical tunneling current indicate that the tunnel oxide could be reduced until direct tunneling between the two conductors surrounding the oxides becomes significant, for example, to - 5 nm.

Section 6.3. The different curves are then "normalized,"' 38 which involves the lateral displacement of the log [,(sat)-log time curves for different drain voltages such that a single curve is obtained. Figure 6.18a illustrates this effect. Here, the different stress curves have been shifted in time with respect to the lowest drain stress voltage data, to form a single normalized curve. From this curve, the lifetime for the unshifted stress voltage curve can be read directly off as the time for a 10% change in this figure. The second approach is to take the stress data and plot them on a linear-log scale. The straight-line behavior allows for the extrapolation of the data to a certain critical level of stress. The problem with this approach is that significant amounts of damage are required to establish the gradient at low drain voltages, as each stress drain voltage has its own gradient. The third method uses ALeff, the change in the effective length of the transistor following stress, instead of Agm. Woltjer et al. 56 '57 established that the drain resistance was directly proportional to the Leff change. Plotting the Leff damage represented by (ALej'f/Tox) 0 5 as a function of the log of time gave a series of straight lines for different drain voltages. The relationship is = (AL ,ef) 0

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Bell MF signaling does not include backward signals to indicate that the setup of a connection has failed. The exchange where the failure occurs sends a tone (busytone, reorder-tone) or announcement, and the calling party disconnects (sends a clear-forward to the originating exchange). The originating exchange then initiates the release of the connection.

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